IPT65R105G7 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – 650V CoolMOSª C7 Gold series (G7) Power Transistor

IPT65R105G7
MOSFET
650VCoolMOSªC7Goldseries(G7)PowerTransistor
TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof
theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand
theimprovedthermalpropertiesoftheTOLLpackagetoenableapossible
SMDsolutionforhighcurrenttopologiessuchasPFCupto3kW
Features
•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•TOLLpackagehasinbuilt4^thpinKelvinSourceconfigurationandlow
parasiticsourceinductance(~1nH).
•TOLLpackageisMSL1compliant,totalPb-free,haseasyvisual
inspectiongroovedleadsandisqualifiedforindustrialapplications
accordingtoJEDEC(J-STD20andJESD22).
•TOLLSMDpackagecombinedwithleadfreedieattachprocessenables
improvedthermalperformanceRth.
Benefits
•C7GoldFOMRDS(on)*Qgis14%betterthanpreviousC7650Venabling
fasterswitchingleadingtohigherefficiency.
•C7Goldcanreach33mΩininTOLL115mm²footprint,whereasprevious
BICC7650Vwas45mΩin150mm²D²PAKfootprint.
•ReducingparasiticsourceinductancebyKelvinSourceimproves
efficiencybyfasterswitchingandeaseofuseduetolessringing.
•TOLLpackageiseasytouseandhasthehighestqualitystandards.
•ImprovedthermalsenableSMDTOLLpackagetobeusedinhigher
currentdesignsthanhasbeenpreviouslypossible.
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
105
mΩ
Qg.typ
35
nC
ID,pulse
75
A
ID,continuous @ Tj<150°C 32
A
Eoss@400V
4.2
µJ
Body diode di/dt
55
A/µs
Type/OrderingCode
IPT65R105G7
Package
PG-HSOF-8
Marking
65C7105G
HSOF
Tab
12345 ₆₇₈
Drain
Tab
Gate
Pin 1
Driver
Source
Pin 2
Source
Pin 3-8
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.1,2016-03-14