IPT210N25NFD Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSª3 Power-Transistor, 250 V

IPT210N25NFD
MOSFET
OptiMOS^ª3Power-Transistor,250V
Features
•N-channel,normallevel
•FastDiode(FD)withreducedQrr
•Optimizedforhardcommutationruggedness
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC¹⁾fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
250
V
RDS(on),max
21.0
mΩ
ID
69
A
HSOF
Tab
12345 ₆₇₈
Drain
Tab
Gate
Pin 1
Source
Pin 2-8
Type/OrderingCode
IPT210N25NFD
Package
PG-HSOF-8
Marking
210N25NF
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.0,2016-01-11