IPT111N20NFD Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSª3 Power-Transistor, 200 V

IPT111N20NFD
MOSFET
OptiMOS^ª3Power-Transistor,200V
Features
•N-channel,normallevel
•FastDiode(FD)withreducedQrr
•Optimizedforhardcommutationruggedness
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC¹⁾fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
200
V
RDS(on),max
11.1
mΩ
ID
96
A
HSOF
Tab
12345 ₆₇₈
Drain
Tab
Gate
Pin 1
Source
Pin 2-8
Type/OrderingCode
IPT111N20NFD
Package
PG-HSOF-8
Marking
111N20NF
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.1,2016-02-23