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IPS60R1K0CE Datasheet, PDF (1/13 Pages) Infineon Technologies AG – 600V CoolMOSª CE Power Transistor | |||
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IPS60R1K0CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOSâ¢isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOSâ¢CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
â¢ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
â¢Veryhighcommutationruggedness
â¢Easytouse/drive
â¢Pb-freeplating,Halogenfreemoldcompound
â¢Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1000
mâ¦
Id.
6.8
A
Qg.typ
13
nC
ID,pulse
12
A
Eoss@400V
1.3
µJ
Type/OrderingCode
IPS60R1K0CE
Package
PG-TO 251
Marking
60S1K0CE
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.0,2016-02-26
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