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IPS118N10NG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor | |||
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IPS118N10N G
OptiMOS®2 Power-Transistor
Features
⢠N-channel, normal level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
⢠175 °C operating temperature
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to JEDEC1) for target application
⢠Ideal for high-frequency switching and synchronous rectification
Type
IPS118N10N G
100 V
11.8 mâ¦
75 A
Package
Marking
PG-TO251-3
118N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
Gate source voltage3)
E AS
V GS
I D=75 A, R GS=25 â¦
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Value
Unit
75
A
53
300
120
mJ
±20
V
125
W
-55 ... 175
°C
55/175/56
Rev. 2.1
page 1
2008-11-19
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