IPP80P03P3L-04 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – OptiMOS-P Power-Transistor

Target data sheet
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
OptiMOS^-P Power-Transistor
Feature
• P-Channel
• Enhancement mode
• Logic Level
• Automotive AEC Q101 qualified
P- TO262 -3-1
Product Summary
V_DS
-30 V
R_DS(on) max. SMD version
4
mΩ
I_D
-80 A
P- TO263 -3-2
P- TO220 -3-1
• Green package (lead free)
• MSL1 up to 260°C
peak reflow temperature
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Type
IPP80P03P3L-04
Package
Ordering Code
P- TO220 -3-1 -
Marking
3P03L04
Gate
pin1
Drain
pin 2
Source
pin 3
IPB80P03P3L-04 P- TO263 -3-2 -
3P03L04
IPI80P03P3L-04 P- TO262 -3-1 -
3P03L04
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current ¹⁾
I_D
T_C=25°C
T_C=100°C
Pulsed drain current
I_{D puls}
T_C=25°C
Avalanche energy, single pulse
E_AS
I_D=-80 A , V_DD=-25V, R_GS=25Ω
Reverse diode dv/dt
dv/dt
Value
-80
-80
-320
432
-6
Unit
A
mJ
kV/µs
I_S=-80A, V_DS=-24V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
±20
V
200
W
-55... +175
°C
55/175/56
Page 1
2004-03-04