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IPP80N08S2-07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor | |||
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OptiMOS® Power-Transistor
Features
⢠N-channel - Enhancement mode
⢠Automotive AEC Q101 qualified
⢠MSL1 up to 260°C peak reflow
⢠175°C operating temperature
⢠Green package (lead free)
PG-TO263-3-2
⢠Ultra low Rds(on)
⢠100% Avalanche tested
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
Product Summary
V DS
R DS(on),max (SMD version)
ID
75 V
7.1 mâ¦
80 A
PG-TO220-3-1
PG-TO262-3-1
Type
IPB80N08S2-07
IPP80N08S2-07
IPI80N08S2-07
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Ordering Code Marking
SP0002-19048 2N0807
SP0002-19040 2N0807
SP0002-19043 2N0807
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Gate source voltage4)
I D,pulse
E AS
V GS
T C=25 °C
I D=80A
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
80
A
80
320
810
mJ
±20
V
300
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2006-03-03
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