IPP80N06S3L-06 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS®-T Power-Transistor

OptiMOS^®-T Power-Transistor
Features
• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 2 (HBM)
EIA/JESD22-A114-B
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
55 V
5.6 mΩ
80 A
PG-TO262-3-1
PG-TO220-3-1
Type
IPB80N06S3L-06
IPI80N06S3L-06
IPP80N06S3L-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Ordering Code Marking
SP0000-88004 3N06L06
SP0000-88002 3N06L06
SP0000-88006 3N06L06
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
Pulsed drain current²⁾
I_D
I _D,pulse
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
T _C=25 °C
Avalanche energy, single pulse³⁾
E _AS
I _D=40 A
Drain gate voltage²⁾
V _DG
Gate source voltage⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
250
55
±16
136
-55 ... +175
55/175/56
Unit
A
mJ
V
V
W
°C
Rev. 1.0
page 1
2005-09-16