IPP77N06S3-09 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS®-T Power-Transistor

OptiMOS^®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
PG-TO263-3-2
• Avalanche tested
• ESD Class 2 (HBM)
EIA/JESD22-A114-B
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
55 V
8.8 mΩ
77 A
PG-TO262-3-1
PG-TO220-3-1
Type
IPB77N06S3-09
IPI77N06S3-09
IPP77N06S3-09
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Ordering Code Marking
SP0000-88715 3N0609
SP0000-88716 3N0609
SP0000-88717 3N0609
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
Pulsed drain current²⁾
I _D,pulse
T _C=100 °C,
V _GS=10 V²⁾
T _C=25 °C
Avalanche energy, single pulse³⁾
E _AS
I _D=38 A
Drain gate voltage²⁾
V _DG
Gate source voltage⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
77
55
308
170
55
±20
107
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 0.9
page 1
2005-09-16