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IPP50R520CP Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor | |||
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CoolMOSTM Power Transistor
Features
⢠Lowest figure of merit RON x Qg
⢠Ultra low gate charge
⢠Extreme dv/dt rated
⢠High peak current capability
⢠Pb-free lead plating; RoHS compliant
⢠Quailfied according to JEDEC1) for target applications
Product Summary
V DS @Tjmax
R DS(on),max
Q g,typ
IPP50R520CP
550 V
0.520 â¦
13 nC
PG-TO220
CoolMOS CP is designed for:
⢠Hard- & Softswitching SMPS topologies
⢠DCM PFC for Lamp Ballast
⢠PWM for Lamp Ballast, PDP and LCD TV
Type
IPP50R520CP
Package
PG-TO220
Marking
5R520P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
Pulsed drain current2)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=2.5 A, V DD=50 V
I D=2.5 A, V DD=50 V
V DS=0...400 V
Gate source voltage
V GS
static
AC (f >1 Hz)
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.0
page 1
Value
7.1
4.5
15
166
0.25
2.5
50
±20
±30
66
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-11-06
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