IPP50R350CP_12 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

IPP50R350CP
CoolMOS^TM Power Transistor
Features
• Lowest figure-of-merit R_ON x Q_g
• Ultra low gate charge
• Extreme dv/dt rated
Product Summary
V_DS @T_jmax
R_DS(on),max
Q_g,typ
550 V
0.350 W
19 nC
• High peak current capability
• Pb-free lead plating; RoHS compliant; Halogen free for mold compound
• Qualified for industrial grade applications according to JEDEC¹⁾
PG-TO220
CoolMOS CP is designed for:
• Hard- & soft switching SMPS topologies
• CCM PFC for Lamp Ballast, LCD & PDP TV
• PWM for Lamp Ballast, LCD & PDP TV
Type
IPP50R350CP
Package
PG-TO220
Marking
5R350P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
I _D,pulse
E _AS
E _AR
I _AR
dv /dt
T _C=100 °C
T _C=25 °C
I _D=3.7 A, V _DD=50 V
I _D=3.7 A, V _DD=50 V
V _DS=0...400 V
Gate source voltage
V _GS
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
Mounting torque
M3 and M3.5 screws
Rev. 2.1
page 1
Value
10
6
22
246
0.37
3.7
50
±20
±30
89
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2012-05-08