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IPP13N03LBG_08 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS2 Power-Transistor | |||
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OptiMOS®2 Power-Transistor
Features
⢠Ideal for high-frequency dc/dc converters
⢠Qualified according to JEDEC1) for target application
⢠N-channel - Logic level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
⢠Superior thermal resistance
⢠175 °C operating temperature
⢠dv /dt rated
⢠Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
IPP13N03LB G
30 V
12.8 mâ¦
30 A
PG-TO220-3-1
Type
IPP13N03LB G
Package
PG-TO220-3-1
Marking
13N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
Pulsed drain current
I D,pulse
T C=100 °C
T C=25 °C3)
Avalanche energy, single pulse
E AS
I D=30 A, R GS=25 â¦
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 0.95
page 1
Value
30
30
120
64
6
±20
52
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2008-05-06
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