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IPP11N03LA Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor | |||
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OptiMOS®2 Power-Transistor
Features
⢠Ideal for high-frequency dc/dc converters
⢠Qualified according to JEDEC1) for target application
⢠N-channel
⢠Logic level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
⢠Superior thermal resistance
⢠175 °C operating temperature
⢠dv /dt rated
⢠Pb-free lead plating; RoHS compliant
IPI11N03LA IPP11N03LA
Product Summary
V DS
R DS(on),max
ID
25 V
11.5 mâ¦
30 A
PG-TO262-3-1
PG-TO220-3-1
Type
IPI11N03LA
IPP11N03LA
Package
PG-TO262-3-1
PG-TO220-3-1
Marking
11N03LA
11N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
Pulsed drain current
I D,pulse
T C=100 °C
T C=25 °C3)
Avalanche energy, single pulse
E AS
I D=30 A, R GS=25 â¦
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Value
30
30
210
80
6
±20
52
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.4
page 1
2006-05-11
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