IPP114N12N3G_11 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

OptiMOS^TM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V_DS
R_DS(on)max
I_D
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP114N12N3 G
IPP114N12N3 G
120 V
11.4 mΩ
75 A
Package
Marking
PG-TO220-3
114N12N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
I_D
I _D,pulse
T _C=25 °C
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=75 A, R _GS=25 Ω
Gate source voltage³⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{see figure 3}
3) _{Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V}
Value
Unit
75
A
53
300
120
mJ
±20
V
136
W
-55 ... 175
°C
55/175/56
Rev. 2.4
page 1
2011-11-25