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IPP110N20NA Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor | |||
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IPB107N20NA IPP110N20NA
OptiMOSTM3 Power-Transistor
Features
⢠N-channel, normal level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO263)
ID
⢠175 °C operating temperature
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to AEC Q101
⢠Halogen-free according to IEC61249-2-21
⢠Ideal for high-frequency switching and synchronous rectification
Type
IPB107N20NA
IPP110N20NA
200 V
10.7 mW
88 A
Package
Marking
PG-TO263-3
107N20NA
PG-TO220-3
110N20NA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current1)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS
I D=80 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
Operating and storage temperature
P tot
T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
Value
88
63
352
560
10
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.1
page 1
2011-05-11
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