IPP100N08N3G Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.

OptiMOS^™3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
IPP100N08N3 G IPI100N08N3 G
IPB097N08N3 G
Product Summary
V _DS
R _{DS(on),max (SMD)}
I_D
80 V
9.7 mΩ
70 A
Type
IPP100N08N3 G IPI100N08N3 G
IPB097N08N3 G
Package
Marking
PG-TO220-3
100N08N
PG-TO262-3
100N08N
PG-TO263-3
097N08N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse³⁾
E _AS
I _D=46 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
Value
70
51
280
90
±20
100
-55 ... 175
55/175/56
Rev. 2.2
page 1
Unit
A
mJ
V
W
°C
2010-01-21