IPP100N06S3L-03 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS®-T Power-Transistor

OptiMOS^®-T Power-Transistor
Features
• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 3 (HBM)
EIA/JESD22-A114-B
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
55 V
2.7 mΩ
100 A
PG-TO262-3-1
PG-TO220-3-1
Type
IPB100N06S3L-03
IPI100N06S3L-03
IPP100N06S3L-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Ordering Code Marking
SP0000-87978 3PN06L03
SP0000-87979 3PN06L03
SP0000-87977 3PN06L03
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
Pulsed drain current²⁾
I _D,pulse
T _C=100 °C,
V _GS=10 V²⁾
T _C=25 °C
Avalanche energy, single pulse³⁾
E _AS
I _D=50 A
Drain gate voltage²⁾
V _DG
Gate source voltage⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
100
A
100
400
690
mJ
55
V
±16
V
300
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2005-09-16