IPP08CN10LG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS2 Power-Transistor

OptiMOS^®2 Power-Transistor
Features
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _DS(on),max
I_D
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP08CN10L G
IPP08CN10L G
100 V
8 m:
98 A
Package
Marking
PG-TO220-3
08CN10L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=98 A, R _GS=25 :
Reverse diode dv /dt
dv /dt
I _D=95 A, V _DS=80 V,
di /dt =100 A/μs,
T _j,max=175 °C
Gate source voltage³⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
98
70
392
254
6
±20
167
-55 ... 175
55/175/56
Unit
A
mJ
kV/μs
V
W
°C
Rev. 0.6
page 1
2007-08-30