IPP084N06L3G_12 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
OptiMOS^™3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
Product Summary
V_DS
R_{DS(on),max (SMD)}
I_D
60 V
8.1 mΩ
50 A
Type
IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G
Package
Marking
PG-TO263-3
081N06L
PG-TO220-3
084N06L
PG-TO262-3
084N06L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current³⁾
Avalanche energy, single pulse⁴⁾
Gate source voltage
I_D
I _D,pulse
E _AS
V _GS
T _C=25 °C²⁾
T _C=100 °C
T _C=25 °C
I _D=50 A, R _GS=25 Ω
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
1)_{J-STD20 and JESD22}
2) _{Current is limited by bondwire; with an R thJC=1.9 K/W the chip is able to carry 73 A.}
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
50
50
200
43
±20
79
-55 ... 175
Unit
A
mJ
V
W
°C
Rev. 2.24
page 1
2012-11-28