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IPP055N03LG_09 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor | |||
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Type
!"#$%!&â¢3 Power-Transistor
Features
⢠Fast switching MOSFET for SMPS
⢠Optimized technology for DC/DC converters
⢠Qualified according to JEDEC1) for target applications
⢠N-channel, logic level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
⢠Avalanche rated
⢠Pb-free plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
Type
IPP055N03L G
IPB055N03L G
Product Summary
V DS
R DS(on),max
ID
IPP055N03L G
IPB055N03L G
30 V
5.5 mW
50 A
Package
Marking
PG-TO220-3-1
055N03L
PG-TO263-3
055N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 1.03
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=35 A, R GS=25 W
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
page 1
Value
50
50
50
50
350
50
60
6
±20
Unit
A
mJ
kV/µs
V
2009-09-22
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