IPP048N06LG_10 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™ Power-Transistor Features For fast switching converters and sync. rectification

OptiMOS^™ Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
• Halogen-free according to IEC61249-2-21
IPP048N06L G IPB048N06L G
Product Summary
V _DS
R _{DS(on),max SMDversion}
I_D
60 V
4.4 mΩ
100 A
Type
IPP048N06L
IPB048N06L
Package
P-TO220-3-1
P-TO263-3-2
Marking
048N06L
048N06L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
I_D
I _D,pulse
E _AS
dv /dt
V _GS
T _C=25 °C¹⁾
T _C=100 °C
T _C=25 °C²⁾
I _D=100 A, R _GS=25 Ω
I _D=100 A, V _DS=48 V,
di /dt =200 A/µs,
T _j,max=175 °C
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature
T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 161A}
2) _{See figure 3}
Rev. 1.15
page 1
Value
100
100
400
810
6
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2010-01-13