IPP041N04NG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
OptiMOS^™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V _DS
R _DS(on),max
I_D
Type
IPB041N04N G
IPP041N04N G
IPP041N04N G
IPB041N04N G
40 V
4.1 mΩ
80 A
Package
Marking
PG-TO263-3
041N04N
PG-TO220-3
041N04N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche current, single pulse³⁾
Avalanche energy, single pulse
Gate source voltage
1) _{J-STD20 and JESD22}
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
I _D,pulse
I _AS
E _AS
V _GS
T _C=25 °C
T _C=25 °C
I _D=80 A, R _GS=25 Ω
Value
Unit
80
A
80
400
80
60
mJ
±20
V
Rev. 1.2
page 1
2009-12-17