IPP015N04NG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V _DS
R _DS(on),max
I_D
Type
IPB015N04N G
IPP015N04N G
IPP015N04N G
IPB015N04N G
40 V
1.5 mΩ
120 A
Package
Marking
PG-TO263-3
015N04N
PG-TO220-3
015N04N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
Pulsed drain current²⁾
I _D,pulse
Avalanche current, single pulse³⁾
I _AS
Avalanche energy, single pulse
E _AS
Gate source voltage
V _GS
1) _{J-STD20 and JESD22}
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
T _C=25 °C
T _C=25 °C
I _D=100 A, R _GS=25 Ω
Value
Unit
120
A
120
400
100
865
mJ
±20
V
Rev. 2.2
page 1
2009-11-16