IPN60R2K1CE Datasheet, PDF (1/13 Pages) Infineon Technologies AG – 600V CoolMOSª CE Power Transistor

IPN60R2K1CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
2.1
Ω
Qg,typ
6.7
nC
ID,pulse
5.9
A
Eoss@400V
0.76
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
IPN60R2K1CE
Package
PG-SOT223
Marking
60S2K1
PG-SOT223
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.0,2016-04-29