IPLU300N04S4-R7 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

IPLU300N04S4-R7
OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant); 100% lead free
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V_DS
R_DS(on)
I_D
40 V
0.76 mW
300 A
H-PSOF-8-1
Tab
8
1
Tab
1
8
Drain
Tab
Type
IPLU300N04S4-R7
Package
H-PSOF-8-1
Marking
4N04R7
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C, V _GS=10V¹⁾
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
I _D,pulse
E _AS
T _C=25 °C
I _D=150 A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Gate
pin 1
Source
pin 2 - 8
Value
Unit
300
A
300
1200
750
mJ
300
A
±20
V
429
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2013-11-12