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IPLU250N04S4-1R7_15 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode
IPLU250N04S4-1R7
OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant); 100% lead free
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
VDS
RDS(on)
ID
40 V
1.7 mW
250 A
H-PSOF-8-1
Tab
8
1
Tab
1
8
Type
Package
IPLU250N04S4-1R7 H-PSOF-8-1
Marking
4N041R7
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25 °C
E AS
I D=125 A
I AS
-
V GS
-
P tot
T C=25 °C
T j, T stg -
Value
250
180
1000
170
250
±20
188
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-12-08