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IPL60R185C7 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – 600V CoolMOSª C7 Power Transistor | |||
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IPL60R185C7
MOSFET
600VCoolMOSªC7PowerTransistor
CoolMOSâ¢C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOSâ¢C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
â¢Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
â¢IncreasedMOSFETdv/dtruggednessto120V/ns
â¢IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
â¢BestinclassRDS(on)/package
â¢SMDpackagewithverylowparasiticinductanceforeasydevicecontrol
â¢QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
â¢4pinkelvinsourceconcept
Benefits
â¢IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
â¢Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
â¢Enablinghighersystemefficiencybylowerswitchinglosses
â¢Increasedpowerdensitysolutionsduetosmallerpackages
â¢OptimizedPCBassemblyandlayoutsolutions
â¢Suitableforapplicationssuchasserver,telecomandsolar
â¢Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional
3pinpackage
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
185
mâ¦
Qg.typ
24
nC
ID,pulse
45
A
ID,continuous @ Tj<150°C 21
A
Eoss@400V
2.7
µJ
Body diode di/dt
400
A/µs
Type/OrderingCode
IPL60R185C7
Package
PG-VSON-4
Marking
60C7185
Final Data Sheet
1
ThinPAK8x8
Drain
Pin 5
Gate
Pin 1
Driver
Source
Pin 2
Power
Source
Pin 3,4
RelatedLinks
see Appendix A
Rev.2.0,2015-12-11
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