IPI90R1K0C3 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS™ Power Transistor

CoolMOS^™ Power Transistor
Features
• Lowest figure-of-merit R_ON x Q_g
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
Product Summary
V _DS @ T _J=25°C
R _DS(on),max @ T _J= 25°C
Q _g,typ
IPI90R1K0C3
900 V
1.0 Ω
34 nC
PG-TO262
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
IPI90R1K0C3
Package
PG-TO262
Marking
9R1K0C
Maximum ratings, at T _J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current ²⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
E _AS
Avalanche energy, repetitive t _AR ^2),3) E AR
Avalanche current, repetitive t _AR ^2),3) I AR
MOSFET dv /dt ruggedness
dv /dt
I _D=1.1 A, V _DD=50 V
I _D=1.1 A, V _DD=50 V
V _DS=0...400 V
Gate source voltage
V _GS
static
AC (f>1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _J, T _stg
Rev. 1.0
page 1
Value
5.7
3.6
12
97
0.37
1.1
50
±20
±30
89
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2008-07-29