IPI70N10SL-16 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

SIPMOS^ Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
• Green Package
(lead free)
P-TO262-3-1
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
P-TO263-3-2
Product Summary
V_DS
100 V
R_DS(on)
16 mΩ
I_D
70 A
P-TO220-3-1
2
P-TO220-3-1
23
1
Type
IPP70N10SL-16
IPB70N10SL-16
IPI70N10SL-16
Package
PG-TO220-3-1
PG-TO263-3-2
PG-TO262-3-1
Ordering Code
SP0002-25708
SP0002-25700
SP000225705
Marking
N10L16
N10L16
N10L-16
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C=25°C
TC=100°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
I_D=70 A , V_DD=25V, R_GS=25Ω
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_{D puls}
E_AS
E_AR
dv/dt
I_S=70A, V_DS=0V, di/dt=200A/µs
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Page 1
Value
Unit
A
70
50
280
700
mJ
25
6
kV/µs
±20
V
250
W
-55... +175
°C
55/175/56
2006-02-14