IPI60R385CP_07 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

CoolMOS^TM Power Transistor
Features
• Lowest figure-of-merit R_ON x Q_g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS @ T_j,max
R _DS(on),max
Q _g,typ
IPI60R385CP
650 V
0.385 Ω
17 nC
PG-TO262
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPI60R385CP
Package
PG-TO262
Ordering Code Marking
SP000103250 6R385P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
I _D=3.4 A, V _DD=50 V
I _D=3.4 A, V _DD=50 V
V _DS=0...480 V
Gate source voltage
V _GS
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Rev. 2.1
page 1
Value
9.0
5.7
27
227
0.3
3
50
±20
±30
83
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2007-02-15