IPI60R299CP Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor

CoolMOS^TM Power Transistor
Features
• Lowest figure-of-merit R_ONxQ_g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS @ T_j,max
R _DS(on),max
Q _g,typ
IPI60R299CP
650 V
0.299 Ω
22 nC
PG-TO262
CoolMOS CP is specially designed for:
Hard switching SMPS topologies
Type
IPI60R299CP
Package
PG-TO262
Ordering Code
SP000103249
Marking
6R299P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse
Symbol Conditions
I_D
T _C=25 °C
T _C=100 °C
I _D,pulse T _C=25 °C
E _AS
I _D=4.4 A, V _DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E _AR
I _D=4.4 A, V _DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I _AR
MOSFET dv /dt ruggedness
dv /dt V _DS=0...480 V
Gate source voltage
V _GS
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Value
11
7
34
290
0.44
4.4
50
±20
±30
96
-55 ... 150
Rev. 2.0
page 1
Unit
A
mJ
A
V/ns
V
W
°C
2006-04-04