IPI60R250CP Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

CoolMOS^TM Power Transistor
Features
• Lowest figure-of-merit R_ONxQ_g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS @ T_j,max
R _DS(on),max @ Tj = 25°C
Q _g,typ
IPI60R250CP
650 V
0.250 Ω
26 nC
PG-TO262
CoolMOS CP is designed for:
Hard switching SMPS topologies
Type
IPI60R250CP
Package
PG-TO262
Marking
6R250P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
Gate source voltage
V _GS
I _D=5.2 A, V _DD=50 V
I _D=5.2 A, V _DD=50 V
V _DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Value
12
8
40
345
0.52
5.2
50
±20
±30
104
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
Rev. 2.1
page 1
2009-04-01