IPI60R199CP_11 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS® Power Transistor

CoolMOS^® Power Transistor
Features
• Lowest figure-of-merit R_ONxQ_g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS @ T_j,max
R _DS(on),max
Q _g,typ
IPI60R199CP
650 V
0.199 Ω
32 nC
PG-TO262
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
IPI60R199CP
Package
PG-TO262
Ordering Code
SP000103248
Marking
6R199P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse
Symbol Conditions
I_D
T _C=25 °C
I _D,pulse
E _AS
T _C=100 °C
T _C=25 °C
I _D=6.6 A, V _DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E _AR
I _D=6.6 A, V _DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I _AR
MOSFET dv /dt ruggedness
dv /dt V _DS=0...480 V
Gate source voltage
V _GS
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Value
16
10
51
436
0.66
6.6
50
±20
±30
139
-55 ... 150
Rev. 2.2
page 1
Unit
A
mJ
A
V/ns
V
W
°C
2011-12-20