IPI60R165CP Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor

CoolMOS^® Power Transistor
Features
• Lowest figure-of-merit R_ONxQ_g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS @ T_j,max
R _DS(on),max
Q _g,typ
IPI60R165CP
650 V
0.165 Ω
39 nC
PG-TO262
CoolMOS CP is designed for:
• Hard switching topologies for Server and Telecom
Type
IPI60R165CP
Package
PG-TO262
Marking
6R165P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse
I_D
I _D,pulse
E _AS
T _C=25 °C
T _C=100 °C
T _C=25 °C
I _D=7.9 A, V _DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E _AR
I _D=7.9 A, V _DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I _AR
MOSFET dv /dt ruggedness
Gate source voltage
dv /dt
V _GS
V _DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
Rev. 2.0
page 1
Value
21
13
61
522
0.79
7.9
50
±20
±30
192
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2008-02-18