IPI50R399CP Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

CoolMOS^TM Power Transistor
Features
• Lowest figure of merit R_ON x Q_g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC¹⁾ for target applications
Product Summary
V _DS @T_jmax
R _DS(on),max
Q _g,typ
IPI50R399CP
560 V
0.399 Ω
17 nC
PG-TO262
CoolMOS CP is designed for:
• Hard and softswitching SMPS for server power supplies
• DCM PFC for Lamp Ballast
• PWM-Stages Lamp Ballast, LCD and PDP TV
Type
IPI50R399CP
Package
PG-TO262
Marking
5R399P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
E _AS
Avalanche
energy,
repetitive
t
2),3)
AR
E _AR
Avalanche
current,
repetitive
t
2),3)
AR
I _AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V _GS
I _D=3.3 A, V _DD=50 V
I _D=3.3 A, V _DD=50 V
V _DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Mounting torque
M3 and M3.5 screws
Rev. 2.0
page 1
Value
9
6
20
215
0.33
3.3
50
±20
±30
83
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-11-21