IPI50R199CP Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor

CoolMOS^® Power Transistor
Features
• Lowest figure-of -merit R_ON x Q_g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC¹⁾ for target applications
Product Summary
V _DS @T_jmax
R _DS(on),max
Q _g,typ
IPI50R199CP
550 V
0.199 Ω
34 nC
TO-262-3
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebook adapter and PDP and LCD TV
• PWM for ATX, Notebook adapter, PDP & LCD TV
Type
IPI50R199CP
Package
PG-TO262
Marking
5R199P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
I _D=6.6 A, V _DD=50 V
I _D=6.6 A, V _DD=50 V
V _DS=0...400 V
Gate source voltage
V _GS
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Mounting torque
M3 and M3.5 screws
Rev. 2.0
page 1
Value
17
11
40
436
0.66
6.6
50
±20
±30
139
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-11-20