IPI076N12N3G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

IPI076N12N3 G IPP076N12N3 G
OptiMOS^TM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _DS(on)max
I_D
120 V
7.6 mΩ
100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPI076N12N3 G
IPP076N12N3 G
Package
Marking
PG-TO262-3
076N12N
PG-TO220-3
076N12N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
Gate source voltage³⁾
E _AS
V _GS
I _D=100 A, R _GS=25 Ω
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
100
A
76
400
230
mJ
±20
V
188
W
-55 ... 175
°C
55/175/56
Rev. 2.3
page 1
2009-07-09