IPI041N12N3G Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

IPP041N12N3 G
OptiMOS^TM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _{DS(on),max (TO-263)}
I_D
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
IPI041N12N3 G
IPB038N12N3 G
120 V
3.8 mΩ
120 A
Type
IPB038N12N3 G IPI041N12N3 G
IPP041N12N3 G
Package
Marking
PG-TO263-3
038N12N
PG-TO262-3
041N12N
PG-TO220-3
041N12N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
Gate source voltage ⁴⁾
E _AS
V _GS
I _D=100 A, R _GS=25 Ω
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
120
A
120
480
900
mJ
±20
V
300
W
-55 ... 175
°C
55/175/56
Rev. 2.2
page 1
2009-07-16