IPG20N10S4L-22 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™-T2 Power-Transistor

OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPG20N10S4L-22
Product Summary
V_DS
R_DS(on),max4)
I_D
100 V
22 mΩ
20 A
PG-TDSON-8-4
Type
IPG20N10S4L-22
Package
Marking
PG-TDSON-8-4 4N10L22
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active¹⁾
I_D
T _C=25°C, V _GS=10V
T _C=100°C, V _GS=10V²⁾
Pulsed drain current²⁾
one channel active
Avalanche energy, single pulse^{2, 4)}
Avalanche current, single pulse⁴⁾
Gate source voltage
I _D,pulse -
E _AS
I _AS
V _GS
I _D=10A
-
-
Power dissipation
one channel active
P _tot
T _C=25°C
Operating and storage temperature T _j, T _stg -
Value
Unit
20
A
20
80
130
mJ
15
A
±16
V
60
W
-55 ... +175
°C
Rev. 1.1
page 1
2013-01-30