IPG20N06S3L-23 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

OptiMOS^®-T Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPG20N06S3L-23
Product Summary
V _DS
R
5)
DS(on),max
I_D
55 V
23 mΩ
20 A
PG-TDSON-8-4
Type
IPG20N06S3L-23
Package
Marking
PG-TDSON-8-4 3N06L23
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous drain current¹⁾
one channel active
Symbol
Conditions
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
one channel active
Avalanche energy, single pulse^{2, 5)}
Avalanche current, single pulse⁵⁾
Gate source voltage⁴⁾
I _D,pulse -
E _AS
I _AS
V _GS
I _D=10A
-
-
Power dissipation
one channel active
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
Unit
20
A
20
80
110
mJ
20
A
±16
V
45
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2008-09-23