IPG20N06S2L-65 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^® Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPG20N06S2L-65
Product Summary
V _DS
R
3)
DS(on),max
I_D
55 V
65 mΩ
20 A
PG-TDSON-8-4
Type
IPG20N06S2L-65
Package
Marking
PG-TDSON-8-4 2N06L65
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active¹⁾
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C, V _GS=10 V
Pulsed drain current¹⁾
one channel active
Avalanche energy, single pulse^{1, 3)}
Avalanche current, single pulse³⁾
Gate source voltage
I _D,pulse -
E _AS
I _AS
V _GS
I _D=10A
-
-
Power dissipation
one channel active
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
Unit
20
A
14
80
40
mJ
15
A
±20
V
43
W
-55 ... +175
°C
55/175/56
2009-09-07