IPG20N04S4-12A Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™-T2 Power-Transistor

IPG20N04S4-12A
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Product Summary
V_DS
R_DS(on),max4)
I_D
40 V
12.2 mΩ
20 A
PG-TDSON-8-10
1
Type
IPG20N04S4-12A
Package
PG-TDSON-8-10
Marking
4N0412
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I_D
T _C=25 °C, V _GS=10 V¹⁾
Pulsed drain current²⁾
one channel active
Avalanche energy, single pulse^{2, 4)}
Avalanche current, single pulse⁴⁾
Gate source voltage
Power dissipation
one channel active
T _C=100 °C,
V _GS=10 V²⁾
I _D,pulse -
E _AS
I _AS
V _GS
I _D=10A
-
-
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
Value
Unit
20
A
20
80
80
mJ
15
A
±20
V
41
W
-55 ... +175
°C
Rev. 1.0
page 1
2013-02-28