IPG20N04S4-09 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

IPG20N04S4-09
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Product Summary
V _DS
R
4)
DS(on),max
I_D
40 V
8.6 mW
20 A
PG-TDSON-8-4
Type
IPG20N04S4-09
Package
Marking
PG-TDSON-8-4 4N0409
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I_D
T _C=25 °C, V _GS=10 V¹⁾
Pulsed drain current²⁾
one channel active
Avalanche energy, single pulse^{2, 4)}
Avalanche current, single pulse⁴⁾
Gate source voltage
Power dissipation
one channel active
T _C=100 °C,
V _GS=10 V²⁾
I _D,pulse -
E _AS
I _AS
V _GS
I _D=10A
-
-
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
Value
20
20
80
145
15
±20
54
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-10-08