IPG16N10S4-61 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™-T2 Power-Transistor

IPG16N10S4-61
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Product Summary
V _DS
R
3)
DS(on),max
I_D
100 V
61 mW
16 A
PG-TDSON-8-4
Type
IPG16N10S4-61
Package
Marking
PG-TDSON-8-4 4N1061
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I_D
T _C=25 °C, V _GS=10 V
Pulsed drain current¹⁾
one channel active
Avalanche energy, single pulse^{1, 3)}
Avalanche current, single pulse³⁾
Gate source voltage
Power dissipation
one channel active
T _C=100 °C,
V _GS=10 V¹⁾
I _D,pulse -
E _AS
I _AS
V _GS
I _D=8A
-
-
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
Value
Unit
16
A
11
64
33
mJ
10
A
±20
V
29
W
-55 ... +175
°C
Rev. 1.0
page 1
2011-11-29