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IPF039N03LG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS®3 Power-Transistor Features Fast switching MOSFET for SMPS | |||
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Type
OptiMOS®3 Power-Transistor
Features
⢠Fast switching MOSFET for SMPS
⢠Optimized technology for DC/DC converters
⢠Qualified according to JEDEC1) for target applications
⢠N-channel, logic level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
⢠Avalanche rated
⢠Pb-free plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
Type
IPF039N03L G
IPU039N03L G
IPF039N03L G
IPU039N03L G
30 V
3.9 mâ¦
50 A
Package
Marking
PG-TO252-3-23
039N03L
PG-TO251-3-21
039N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 0.9 target datasheet
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=50 A, R GS=25 â¦
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
page 1
Value
50
50
50
50
350
50
115
6
±20
Unit
A
mJ
kV/µs
V
2006-10-23
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