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IPD70R600CE Datasheet, PDF (1/14 Pages) Infineon Technologies AG – 700V CoolMOSª CE Power Transistor | |||
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IPD70R600CE
MOSFET
700VCoolMOSªCEPowerTransistor
CoolMOSâ¢isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOSâ¢CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
â¢ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
â¢Veryhighcommutationruggedness
â¢Easytouse/drive
â¢Pb-freeplating,Halogenfreemoldcompound
â¢Qualifiedforstandardgradeapplications
Applications
Adapter,LCD&PDPTVandIndoorlighting
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
750
V
RDS(on),max
600
mâ¦
Qg.typ
22
nC
Id.typ
10.5
A
ID,pulse
18
A
Eoss@400V
2
µJ
Type/OrderingCode
IPD70R600CE
Package
PG-TO 252
Marking
70S600CE
DPAK
tab
2
1
3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.0,2016-02-16
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