IPD70R2K0CE Datasheet, PDF (1/14 Pages) Infineon Technologies AG – 700V CoolMOSª CE Power Transistor

IPD70R2K0CE
MOSFET
700VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
(QR)Flybackinlowpowerchargersformobiledevicesandpowertools
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
750
V
RDS(on),max
2000
mΩ
Id.typ
4
A
Qg.typ
7.8
nC
ID,pulse
6.3
A
Eoss@400V
0.85
µJ
Type/OrderingCode
IPD70R2K0CE
Package
PG-TO 252
Marking
70S2K0CE
DPAK
tab
2
1
3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.0,2016-02-16