IPD70R1K4CE Datasheet, PDF (1/15 Pages) Infineon Technologies AG – 700V CoolMOSª CE Power Transistor

IPD70R1K4CE,IPS70R1K4CE
MOSFET
700VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
Adapter,LCD&PDPTVandIndoorlighting
DPAK
tab
2
1
3
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
750
V
RDS(on),max
1400
mΩ
Qg.typ
10.5
nC
Id.typ
5.4
A
ID,pulse
8.3
A
Eoss@400V
1.15
µJ
Type/OrderingCode
IPD70R1K4CE
IPS70R1K4CE
Package
PG-TO 252
PG-TO 251
Marking
70S1K4CE
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.0,2016-02-16