IPD70P04P4-09 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

OptiMOS^®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD70P04P4-09
Product Summary
V _DS
R _DS(on)
I_D
-40 V
8.9 mΩ
-73 A
PG-TO252-3-313
Type
IPD70P04P4-09
Package
Marking
PG-TO252-3-313 4P0409
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C,
V _GS=-10V
T _C=100°C,
V _GS=-10V¹⁾
Pulsed drain current¹⁾
I _D,pulse T _C=25°C
Avalanche energy, single pulse¹⁾
E _AS
I _D=-36A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
Unit
-73
A
-52
-292
24
mJ
-73
A
±20
V
75
W
-55 ... +175
°C
55/175/56
2010-05-26