IPD640N06LG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

OptiMOS^® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
IPD640N06L G
60 V
64 mΩ
18 A
Type
IPD640N06L G
TPyapcekage
IMPaDr6k4in0gN06L G
PG-TO252-3
640NP0G6L-TO252-3
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C¹⁾
Avalanche energy, single pulse
E _AS
I _D=18 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=18 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{See figure 3}
Rev. 1.2
page 1
Value
18
12
72
43
6
±20
47
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-03-27